【领先的片式无源器件整合供应商 — 南京南山半导体有限公司 】
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BAV16W/1N4148WFAST SWITHING DIODES
SOD-1231.80(.071)1.40(.055)1.65(.065)1.55(.061)FEATURES
Fast switching speed
Surface mount package ideally suitedfor automatic insertion
For general purpose switching applicationsHigh conductance
3.86(0.152)3.56(0.145)2.84(0.112)2.54(0.100)3.9(0.154)3.7(0.146)2.7(0.106)2.6(0.102)MECHANICAL DATA.71(0.028).50(0.020).15(.006)MAX1.35(.053).94(.037).135(.005).127(.004)0.6(.023)0.5(.020)1.15(.045)1.05(.041).25(.010)MINCase: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Polarity: Polarity symbols marked on caseMarking:T6, T4
Dimensions in millimeters and (inches)MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @TA=25CPARAMETER
Peak repetitive peak reverse voltageWorking peak
DC Blocking voltageRMS Reverse voltageForward continuous currentAverage rectified output currentPeak forward current @=1.0us @=1.0sPower dissipation
Thermal resistance junction to ambientJunction temperatureStorage temperature
Non-Repetitive peak reverse voltageElectrical ratings @TA=25CPARAMETERFroward voltageSYMBOLS
Limits75533001502.01.0400315125-65 to +150
100
Min.Typ.Max.0.7150.8551.01.2512524UnitVVVVUNITSVVmAmAAmWK/WCCV
ConditionsIF=1.0mAIF=10mAIF=50mAIF=150mAVR=75VVR=20VVR=0V,f=1.0MHzIF=IR=10mAIrr=0.1XIR,RL=100VRRMVRWMVRVR(RMS)IFMIOIFSMPdRΘJA
Tj
TSTGVRM
SYMBOLSReverse currentCapacitance between terminalsReverse recovery timeVF1VF2VF3VF4IR1IR2CTtrruAnApFnsRLING JIESTAR SEAELECTRONICS CO.,LTD. 【领先的片式无源器件整合供应商 — 南京南山半导体有限公司 】
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RATINGS AND CHARACTERISTIC CURVES BAV16W/1N4148W
)AmFIG. 1- FORWARD CHARACTERISTICS(TNE1000RRUC D100RWAROF10 SUOE1.0NTANTA0.1SNI,FI0.010 1 10VF INSTANTANEOUS FORWARD VOLTAGE.(V)FIG. 2-LEAKAGE CURRENT VS JUNCTIONTEMPERATURE10,000)An(TNE1000RRUC EGA100KAEL ,R10I10 100 200VR REVERSE VOLTAGE.(V)RSTAR SEALING JIEELECTRONICS CO.,LTD.【领先的片式无源器件整合供应商—南京南山半导体有限公司】
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