ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
FEATURES
•Metal case with ceramic insulator•All diffused design•Center amplifying gate•Guaranteed high dV/dt•Guaranteed high dI/dt
TO-200AB (E-PUK)T
TTT
RoHSCOMPLIANT•International standard case TO-200AB (E-PUK)•High surge current capability•Low thermal impedance•Lead (Pb)-free
•High speed performance
T
PRODUCT SUMMARY
IT(AV)
720 A
TYPICAL APPLICATIONS
•Inverters•Choppers•Induction heating
•All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMEER ES CONDIIONSIT(AV)
VALUES720
Ths
551435
Ths50 Hz60 Hz50 Hz60 Hz
2511 00011 500605553400 to 800
Range
10 to 30- 40 to 125
UNISA°CA°CA
IT(RMS)
ITSM
I2t
VDRM/VRRMtqTJ
kA2sVµs°C
ELECTRICAL SPECIFICATIONSVOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
0408
VDRM/VRRM, MAXIMUMREPETITIVE PEAK VOLTAGE
V
400800
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500900
Document Number: 93678Revision: 15-May-08
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IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM
mA
50
ST333C..C
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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
TTTCURRENT CARRYING CAPABILITYFREQUENCY180° elITM180° elITM100 µsITMUNITS50 Hz400 Hz1000 Hz2500 HzRecovery voltage VrVoltage before turn-on VdRise of on-state current dI/dtHeatsink temperatureEquivalent values for RC circuit16301630135072050VDRM504010/0.47142013901090550252026702440145050VDRM-2260233021201220761040802420123050VDRM-6820360021001027VA/µs5510/0.47°CΩ/µFA554010/0.475540ON-STATE CONDUCTION
Maximum average on-state currentat heatsink temperature Maximum RMS on-state currentMaximum peak, one half cycle, non-repetitive surge current
TTTTPARAMEER SYMBOLIT(AV)IT(RMS)
ES CONDIIONS VALUESUNIS
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooledt = 10 mst = 8.3 mst = 10 mst = 8.3 mst = 10 mst = 8.3 mst = 10 mst = 8.3 ms
No voltage reapplied100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied
720 (350)55 (75)143511 00011 5009250
Sinusoidal half wave,initial TJ = TJ maximum
970060555342839160501.960.910.930.580.586001000
mΩmAVkA2√skA2sAA°C
ITSM
Maximum I2t for fusingI2t
Maximum I2√t for fusingMaximum peak on-state voltageLow level value of threshold voltageHigh level value of threshold voltageLow level value of forward slope resistanceHigh level value of forward slope resistanceMaximum holding currentTypical latching current
I2√tVTMVT(TO)1VT(TO)2rt1rt2IHIL
t = 0.1 to 10 ms, no voltage reapplied
ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum(I > π x IT(AV)), TJ = TJ maximumTJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
SWITCHING
PARAMEER SYMBOLMaximum non-repetitive rate of riseof turned on currentTypical delay time
dI/dttdtq
VALUES
ES CONDIIONS MIN.MAX.
TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dtTJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µsResistive load, gate pulse: 10 V, 5 Ω source
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/µs
VR = 50 V, tp = 500 µs, dV/dt: See table in device code
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1010001.1
µs
30
UNITSA/µs
Maximum turn-off time
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ST333C..C Series
Inverter Grade ThyristorsVishay High Power Products (Hockey PUK Version), 720 A
BLOCKING
PARAMEER SYMBOLMaximum critical rate of rise of off-state voltageMaximum peak reverse and off-state leakage current
dV/dtIRRM,IDRM
ES CONDIIONS VALUESUNIS
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
TJ = TJ maximum, rated VDRM/VRRM applied
50050
V/µsmA
TRIGGERING
PARAMEER SYMBOLMaximum peak gate powerMaximum average gate powerMaximum peak positive gate currentMaximum peak positive gate voltageMaximum peak negative gate voltageMaximum DC gate currrent required to triggerMaximum DC gate voltage required to triggerMaximum DC gate current not to triggerMaximum DC gate voltage not to trigger
PGMIGM+ VGM- VGMIGTVGTIGDVGD
TJ = 25 °C, VA = 12 V, Ra = 6 ΩTJ = TJ maximum, rated VDRM appliedTJ = TJ maximum, tp ≤ 5 ms
ES CONDIIONS VALUESUNIS
60
TJ = TJ maximum, f = 50 Hz, d% = 50W
10PG(AV)TTTT102052003200.25
AVmAVmAV
TTTT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMEER SYMBOLMaximum operating temperature range
TJ
ES CONDIIONS VALUESUNIS
- 40 to 125
Maximum storage temperature range
°C- 40 to 150TStg
TTTTDC operation single side cooled0.09
Maximum thermal resistance, junction to heatsinkRthJ-hs
DC operation double side cooled0.04
K/W
DC operation single side cooled0.020
Maximum thermal resistance, case to heatsinkRthC-hs
DC operation double side cooled0.010Mounting force, ± 10 %Approximate weightCase style
See dimensions - link at the end of datasheet
9800
(1000)83
N(kg)g
TO-200AB (E-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
180°120°90°60°30°
SINUSOIDAL CONDUCTIONSINGLE SIDE
0.0100.0120.0150.0220.036
DOUBLE SIDE
0.0110.0120.0150.0220.036
RECTANGULAR CONDUCTIONSINGLE SIDE
0.0070.0120.0160.0230.036
DOUBLE SIDE
0.0070.0130.0170.0230.037
TJ = TJ maximum
K/W
TEST CONDITIONS
UNITS
Note
•The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93678Revision: 15-May-08
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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
130Maximum Allowable Heatsink Temperature (°C)1201101009080706050403020030°60°90°120°180°DC2004006008001000120014001600Average On-state Current (A)Conduction Period130Maximum Allowable Heatsink Temperature (°C)12011010090807060504030200100ST333C..C Series(Single Side Cooled)R (DC) = 0.09 K/WthJ-hsST333C..C Series(Double Side Cooled)R (DC) = 0.04 K/WthJ-hsConduction Angle30°60°90°200300120°180°500600400Average On-state Current (A)Fig. 1 - Current Ratings CharacteristicsFig. 4 - Current Ratings Characteristics
130MaximumAllowableHeatsinkTemperature(°C)1201101009080706050403020030°60°Conduction Period2200MaximumAverageOn-statePowerLoss(W)ST333C..C Series(Single Side Cooled)Rth (J-hsDC) = 0.09 K/W200018001600140012001000800600400200002004006008001000Average On-state Current (A)Conduction Angle180°120°90°60°30°RMS Limit90°120°180°DCST333C..C SeriesTJ = 125°C100200300400500600700800900Average On-state Current (A)Fig. 2 - Current Ratings CharacteristicsFig. 5 - On-State Power Loss Characteristics
MaximumAllowableHeatsinkTemperature(°C)120110100908070605040302010020030°ST333C..C Series(Double Side Cooled)RthJ-h (DC) = 0.04 K/WsMaximum Average On-state Power Loss (W)130Conduction Angle60°90°120°180°100026002400220020001800160014001200100080060040020000DC180°120°90°60°30°RMSLimitConduction PeriodST333C..C SeriesTJ=125°C2004006008001000120014001600Average On-state Current (A)400600800Average On-state Current (A)Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
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ST333C..C Series
Inverter Grade ThyristorsVishay High Power Products (Hockey PUK Version), 720 A
10000Peak Half Sine Wave On-state Current (A)95009000850080007500700065006000550050004500110100Number Of Equal Amplitude Half Cycle Current Pulses (N)Transient Thermal Impedance Zt h J - h s (K/W)At Any Rated Load Condition And WithRated V Applied Following Surge.RRMInitial T J = 125°C@ 60 Hz 0.0083 s@ 50 Hz 0.0100 s0.1ST333C..C Series0.01Steady State ValueR =thJ-hs 0.09 K/W(Single Side Cooled)R =thJ-hs 0.04 K/W(Double Side Cooled)(DC Operation)ST333C..C Series0.0010.0010.010.1110Square Wave Pulse Duration (s)Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
12000Peak Half Sine Wave On-state Current (A)Maximum Reverse Recovery Charge - Qrr (µC)Maximum Non Repetitive Surge CurrentVersus Pulse Train Duration. Control11000Of Conduction May Not Be Maintained.Initial T = 125°CJ10000No Voltage ReappliedRated V Reapplied9000RRM8000700060005000ST333C..C Series0.1Pulse Train Duration (s)132030028026024022020018016014012010080102030405060708090100Rate Of Fall Of On-state Current - di/dt (A/µs)I = 500 ATM300 A200 A100 A50 AST333C..C SeriesT = 125 °CJ40000.01Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10000Maximum Reverse Recovery Current - Irr (A)Instantaneous On-state Current (A)18016014012010080604020102030405060708090100Rate Of Fall Of Forward Current - di/dt (A/µs)ST333C..C SeriesT =J 125 °CI = 500 ATM300 A200 A100 A50 A1000T = 25°CJT = 125°CJST333C..C Series1000.511.522.533.544.555.566.5Instantaneous On-state Voltage (V)Fig. 9 - On-State Voltage Drop Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
1E4Peak On-state Current (A)1000150050040020010050 Hz1000150050040020010050 Hz1E3250030005000Snubber circuitR =s 10 ohmsCs= 0.47 µFV D = 80% VDRM ST333C..C Series Sinusoidal pulse T = 40°CC250030005000tpSnubber circuitR = 10 ohmssC = 0.47 µFsV = D80% VDRM ST333C..C Series Sinusoidal pulse T =C 55°Ctp1E21E11E21E31E41E11E21E31E4PulseBasewidth(µs)Pulse Basewidth (µs)Fig. 13 - Frequency Characteristics
1E4Snubber circuitR =s 10 ohmsCs= 0.47 µFV D = 80% VDRM100050015002000250030005000tp ST333C..C Series Trapezoidal pulse T = 40°CC di/dt = 50A/µsPeak On-state Current (A)100050040020010050 Hz10040020050 Hz1E31500200025003000Snubber circuitR = 10 ohmssC s= 0.47 µFV =D 80% VDRM5000tp ST333C..C Series Trapezoidal pulse T = 55°CC di/dt = 100A/µs1E21E11E21E31E41E11E21E31E4Pulse Basewidth (µs)Pulse Basewidth (µs)Fig. 14 - Frequency Characteristics
1E4Peak On-state Current (A)Snubber circuitR =s 10 ohmsCs= 0.47 µFV D = 80% VDRM50040020010050 Hz400200500100015002000250030005000tp10050 Hz10001E315002000250030005000tpSnubber circuitR = 10 ohmssCs= 0.47 µFV D = 80% VDRM ST333C..C Series Trapezoidal pulse T C = 40°C di/dt = 100A/µs ST333C..C Series Trapezoidal pulse T = 55°CC di/dt = 100A/µs1E21E11E21E31E41E11E21E31E4Pulse Basewidth (µs)Pulse Basewidth (µs)Fig. 15 - Frequency Characteristics
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ST333C..C Series
Inverter Grade ThyristorsVishay High Power Products (Hockey PUK Version), 720 A
1E43510tp20 joules per pulse ST333C Series Rectangular pulse di/dt = 50A/µs3210.50.40.3Peak On-state Current (A)2120 joules per pulse1051E30.50.30.21E20.2 ST333C..C Series Sinusoidal pulsetp1E11E11E21E31E41E41E11E21E31E4PulseBasewidth(µs)Pulse Basewidth (µs)Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100Instantaneous Gate Voltage (V)Rectangular gate pulsea) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µsb) Recommended load line for<=30%rateddi/dt: 10V, 10ohms10 tr<=1 µs(b)(1) PGM = 10W, tp = 20ms(2) PGM = 20W, tp = 10ms(3) PGM = 40W, tp = 5ms(4) PGM = 60W, tp = 3.3ms(a)Tj=-40 °CTj=25°CTj=125 °C1VGDIGD0.10.0010.01(1)(2)(3)(4)Device: ST333C..C Series Frequency Limited by PG(AV)0.1110100Instantaneous Gate Current (A)Fig. 17 - Gate Characteristics
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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
ORDERING INFORMATION TABLE
Device codeST11234567332--------- 33C4085C6H7K819-10ThyristorEssential part number3 = Fast turn offC = Ceramic PUKVoltage code x 100 = VRRM (see Voltage Ratings table)C = PUK case TO-200AB (E-PUK)Reapplied dV/dt code (for tq test condition)tq codedV/dt - tq combinations availabledV/dt (V/µs)205010020040010CNDNEN----0 = Eyelet term. 12CMDMEMFM*--DLELFL*HL(gate and aux. cathode unsoldered leads)tq (µs)15CL18CPDPEPFPHP 1 = Fast-on term. 20CKDKEKFKHK25------FJHJ (gate and aux. cathode unsoldered leads)30--------HH 2 = Eyelet term. * Standard part number. (gate and aux. cathode soldered leads)All other types available only on request. 3 = Fast-on term. (gate and aux. cathode soldered leads)10-Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection)LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95075
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
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Document Number: 91000Revision: 18-Jul-08
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