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专利名称：Multilevel Resistive Memory device and its
writing erasing method
发明人：Tsushima, Tomohito, Sony
Corporation,Aratani, Katsuhisa, SonyCorporation,Kouchiyama, Akira, SonyCorporation
申请号：EP05250263.0申请日：20050119公开号：EP1557841A3公开日：20061025
专利附图：
摘要：Array
申请人：SONY CORPORATION
地址：6-7-35 Kitashinagawa, Shinagawa-ku Tokyo 141-0001 JP
国籍：JP
代理机构：Pilch, Adam John Michael
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