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专利名称：Methods for fabricating integrated circuits
using improved masks
发明人：Ming He,Seowoo Nam,Craig Child申请号：US14037774申请日：20130926公开号：US09165770B2公开日：20151020
专利附图：
摘要：Methods for fabricating integrated circuits are provided. In an embodiment, amethod for fabricating an integrated circuit includes forming a mask overlying a materialto be etched by forming first hard mask segments overlying the material to be etched,forming sacrificial mandrels overlying the material to be etched and around each hardmask segment, forming second hard mask segments overlying the semiconductorsubstrate and adjacent each sacrificial mandrel, and removing the sacrificial mandrels toform first gaps surrounding each first hard mask segment, wherein each first gap isbounded by a respective first hard mask segment and an adjacent second hard masksegment. The method includes etching the material to be etched through the mask.
申请人：GLOBALFOUNDRIES, Inc.
地址：Grand Cayman KY
国籍：KY
代理机构：Ingrassia Fisher & Lorenz, P.C.
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