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2N87-D

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ON Semiconductor)

Complementary Silicon PlasticPower Transistors

...designed for use in general–purpose amplifier and switchingapplications.

•DC Current Gain Specified to 15 Amperes —•••

hFE = 20–150 @ IC = 5.0 Adc

= 5.0 (Min) @ IC = 15 Adc

Collector–Emitter Sustaining Voltage —

VCEO(sus) = 60 Vdc (Min) – 2N87, 2N90

= 80 Vdc (Min) – 2N88, 2N91

High Current Gain — Bandwidth Product

fT = 5.0 MHz (Min) @ IC = 1.0 Adc

TO–220AB Compact Package

MAXIMUM RATINGS (1)RatingCollector–Emitter VoltageCollector–Base VoltageEmitter–Base VoltageBase CurrentSymbolVCEOVCBVEBICIBPDPDTJ, Tstg2N872N9060702N882N918090UnitVdcVdcVdcAdcAdc5.0155.0Collector Current — ContinuousTotal Power Dissipation @ TC = 25_CDerate above 25_CTotal Power Dissipation @ TA = 25_CDerate above 25_COperating and Storage JunctionTemperature Range750.6WattsW/_CWattsW/_C_C1.80.014–65 to +150THERMAL CHARACTERISTICSCharacteristicThermal Resistance, Junction to CaseThermal Resistance, Junction to Ambient(1)Indicates JEDEC Registered Data.SymbolRθJCRθJAMax1.6770Unit_C/W_C/WPreferred devices are ON Semiconductor recommended choices for future use and best overall value.

2N87 2N88 2N90 2N91

TATC4.080PD, POWER DISSIPATION (WATTS)3.060

TC2.040

TA1.020

00

020406080100120140160TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

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2N87 2N88 2N90 2N91

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)CharacteristicOFF CHARACTERISTICSSymbolMinMaxUnitCollector–Emitter Sustaining Voltage (1)(IC = 200 mAdc, IB = 0)Collector–Emitter Sustaining Voltage (1)(IC = 200 mAdc, VBE = 1.5 Vdc)Collector Cutoff Current(VCE = 30 Vdc, IB = 0)(VCE = 40 Vdc, IB = 0)2N87, 2N902N88, 2N91VCEO(sus)Vdc60807090————————VCEX2N87, 2N902N88, 2N912N87, 2N902N88, 2N91——VdcICEOmAdc1.01.0Collector Cutoff Current(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)2N87, 2N902N88, 2N912N87, 2N902N88, 2N91ICEX5005005.05.01.0µAdcIEBOmAdcON CHARACTERISTICSDC Current Gain(IC = 5.0 Adc, VCE = 4.0 Vdc)(IC = 15 Adc, VCE = 4.0 Vdc)hFE—205.0————150—1.33.51.33.5Collector–Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.5 Adc)(IC = 15 Adc, IB = 5.0 Adc)Base–Emitter On Voltage(IC = 5.0 Adc, VCE = 4.0 Vdc)(IC = 15 Adc, VCE = 4.0 Vdc)VCE(sat)VdcVBE(on)VdcDYNAMIC CHARACTERISTICSCurrent–Gain — Bandwidth Product (2)(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)fT5.025——MHz—Small–Signal Current Gain(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)*Indicates JEDEC Registered Data.(1)Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.(2)fT = |hfe| • ftest.

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2N87 2N88 2N90 2N91

VCC+ 30 V25 µs+ 10 V0

- 10 Vtr, tf v 10 nsDUTY CYCLE = 1.0%

51RBD1- 4 V

RCSCOPE

t, TIME (ns)10005002001005020

NPNPNPtd @ VBE(off) [ 5.0 VtrRB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.FOR PNP, REVERSE ALL POLARITIES.D1 MUST BE FAST RECOVERY TYPE, e.g.:ą1N5825 USED ABOVE IB [ 100 mAąMSD6100 USED BELOW IB [ 100 mA

TC = 25°CVCC = 30 VIC/IB = 1010

0.50.22.01.05.0IC, COLLECTOR CURRENT (AMP)

1020Figure 2. Switching Time Test CircuitFigure 3. Turn–On Time

r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)1.00.70.50.30.2

D = 0.50.20.10.050.020.010.02SINGLE PULSE0.050.10.20.51.02.0P(pk)ZθJC (t) = r(t) RθJCRθJC = 1.67°C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNt1READ TIME AT t1t2TJ(pk) - TC = P(pk) ZθJC(t)DUTY CYCLE, D = t1/t25.01020501002005001.0 k0.10.070.050.030.020.010.01t, TIME (ms)

Figure 4. Thermal Response

20IC, COLLECTOR CURRENT (AMP)105.02.01.00.50.20.1

100 µs500 µs1.0 msTJ = 150°CSECOND BREAKDOWN LIMITEDBONDING WIRE LIMITEDTHERMALLY LIMITED @ TC = 25°CCURVES APPLY BELOW RATED VCEO2N87, 2N902N88, 2N912.05.0 msdc4.04060102080VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability ofa transistors average junction temperature and secondbreakdown. Safe operating area curves indicate IC – VCElimits of the transistor that must be observed for reliableoperation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk)v 150_C. TJ(pk) may be calculated from the data inFigure 4. At high case temperatures, thermal limitations willreduce the power that can be handled to values less than thelimitations imposed by second breakdown

Figure 5. Active–Region Safe Operating Area

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2N87 2N88 2N90 2N91

5000

1000700

ts1000t, TIME (ns)500200100500.20.5tfNPNPNPVCC = 30 VIC/IB = 10IB1 = IB2TJ = 25°C1.02.05.0IC, COLLECTOR CURRENT (AMP)

1020C, CAPACITANCE (pF)300200

CibCobCob10070500.5NPNPNPTJ = 25°C1.02.05.01020VR, REVERSE VOLTAGE (VOLTS)

50Figure 6. Turn–Off TimeFigure 7. Capacitances

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2N87 2N88 2N90 2N91

NPN

2N87, 2N88

500TJ = 150°C200hFE, DC CURRENT GAIN1005020105.00.2VCE = 2.0 VhFE, DC CURRENT GAIN25°C-ā55°C20010050201010205.00.2VCE = 2.0 V0.51.02.05.0IC, COLLECTOR CURRENT (AMP)

102025°C-ā55°CTJ = 150°C500PNP

2N90, 2N91

0.55.01.02.0IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)1.81.61.41.21.00.80.60.40.205.01020IC = 1.0 A4.0 ATJ = 25°CVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)2.02.01.81.61.41.21.00.80.60.40.205.01020501002005001000IB, BASE CURRENT (mA)

20005000IC = 1.0 A4.0 A8.0 ATJ = 25°C8.0 A501002005001000IB, BASE CURRENT (mA)

20005000Figure 9. Collector Saturation Region

2.82.4V, VOLTAGE (VOLTS)2.01.61.20.80.400.2VBE(sat) = IC/IB = 10VBE @ VCE = 2.0 VVCE(sat) @ IC/IB = 100.51.02.05.01020IC, COLLECTOR CURRENT (AMP)TJ = 25°CV, VOLTAGE (VOLTS)2.82.42.01.61.20.80.400.2VBE(sat) @ IC/IB = 10VBE @ VCE = 2.0 VVCE(sat) @ IC/IB = 100.51.02.05.01020IC, COLLECTOR CURRENT (AMP)TJ = 25°CFigure 10. “On” Voltages

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2N87 2N88 2N90 2N91

PACKAGE DIMENSIONS

TO–220ABCASE 221A–09ISSUE AA

–T–B4SEATINGPLANENOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION Z DEFINES A ZONE WHERE ALLBODY AND LEAD IRREGULARITIES AREALLOWED.DIMABCDFGHJKLNQRSTUVZINCHESMINMAX0.5700.6200.3800.4050.1600.1900.0250.0350.1420.1470.0950.1050.1100.1550.0180.0250.5000.5620.0450.0600.1900.2100.1000.1200.0800.1100.0450.0550.2350.2550.0000.0500.045------0.080MILLIMETERSMINMAX14.4815.759.6610.284.074.820.0.883.613.732.422.662.803.930.460.12.7014.271.151.524.835.332.543.042.042.791.151.395.976.470.001.271.15------2.04FTCSQ123AUKHZLVGDNSTYLE 1:PIN 1.2.3.4.

BASECOLLECTOREMITTERCOLLECTOR

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2N87 2N88 2N90 2N91

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to makechanges without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for anyparticular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must bevalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or deathmay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLCand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney feesarising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges thatSCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700Email: r14525@onsemi.com

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