Complementary Silicon PlasticPower Transistors
...designed for use in general–purpose amplifier and switchingapplications.
•DC Current Gain Specified to 15 Amperes —•••
hFE = 20–150 @ IC = 5.0 Adc
= 5.0 (Min) @ IC = 15 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) – 2N87, 2N90
= 80 Vdc (Min) – 2N88, 2N91
High Current Gain — Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
TO–220AB Compact Package
MAXIMUM RATINGS (1)RatingCollector–Emitter VoltageCollector–Base VoltageEmitter–Base VoltageBase CurrentSymbolVCEOVCBVEBICIBPDPDTJ, Tstg2N872N9060702N882N918090UnitVdcVdcVdcAdcAdc5.0155.0Collector Current — ContinuousTotal Power Dissipation @ TC = 25_CDerate above 25_CTotal Power Dissipation @ TA = 25_CDerate above 25_COperating and Storage JunctionTemperature Range750.6WattsW/_CWattsW/_C_C1.80.014–65 to +150THERMAL CHARACTERISTICSCharacteristicThermal Resistance, Junction to CaseThermal Resistance, Junction to Ambient(1)Indicates JEDEC Registered Data.SymbolRθJCRθJAMax1.6770Unit_C/W_C/WPreferred devices are ON Semiconductor recommended choices for future use and best overall value.
2N87 2N88 2N90 2N91
TATC4.080PD, POWER DISSIPATION (WATTS)3.060
TC2.040
TA1.020
00
020406080100120140160TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2N87 2N88 2N90 2N91
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)CharacteristicOFF CHARACTERISTICSSymbolMinMaxUnitCollector–Emitter Sustaining Voltage (1)(IC = 200 mAdc, IB = 0)Collector–Emitter Sustaining Voltage (1)(IC = 200 mAdc, VBE = 1.5 Vdc)Collector Cutoff Current(VCE = 30 Vdc, IB = 0)(VCE = 40 Vdc, IB = 0)2N87, 2N902N88, 2N91VCEO(sus)Vdc60807090————————VCEX2N87, 2N902N88, 2N912N87, 2N902N88, 2N91——VdcICEOmAdc1.01.0Collector Cutoff Current(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)2N87, 2N902N88, 2N912N87, 2N902N88, 2N91ICEX5005005.05.01.0µAdcIEBOmAdcON CHARACTERISTICSDC Current Gain(IC = 5.0 Adc, VCE = 4.0 Vdc)(IC = 15 Adc, VCE = 4.0 Vdc)hFE—205.0————150—1.33.51.33.5Collector–Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.5 Adc)(IC = 15 Adc, IB = 5.0 Adc)Base–Emitter On Voltage(IC = 5.0 Adc, VCE = 4.0 Vdc)(IC = 15 Adc, VCE = 4.0 Vdc)VCE(sat)VdcVBE(on)VdcDYNAMIC CHARACTERISTICSCurrent–Gain — Bandwidth Product (2)(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)fT5.025——MHz—Small–Signal Current Gain(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)*Indicates JEDEC Registered Data.(1)Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.(2)fT = |hfe| • ftest.
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2N87 2N88 2N90 2N91
VCC+ 30 V25 µs+ 10 V0
- 10 Vtr, tf v 10 nsDUTY CYCLE = 1.0%
51RBD1- 4 V
RCSCOPE
t, TIME (ns)10005002001005020
NPNPNPtd @ VBE(off) [ 5.0 VtrRB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.FOR PNP, REVERSE ALL POLARITIES.D1 MUST BE FAST RECOVERY TYPE, e.g.:ą1N5825 USED ABOVE IB [ 100 mAąMSD6100 USED BELOW IB [ 100 mA
TC = 25°CVCC = 30 VIC/IB = 1010
0.50.22.01.05.0IC, COLLECTOR CURRENT (AMP)
1020Figure 2. Switching Time Test CircuitFigure 3. Turn–On Time
r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)1.00.70.50.30.2
D = 0.50.20.10.050.020.010.02SINGLE PULSE0.050.10.20.51.02.0P(pk)ZθJC (t) = r(t) RθJCRθJC = 1.67°C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNt1READ TIME AT t1t2TJ(pk) - TC = P(pk) ZθJC(t)DUTY CYCLE, D = t1/t25.01020501002005001.0 k0.10.070.050.030.020.010.01t, TIME (ms)
Figure 4. Thermal Response
20IC, COLLECTOR CURRENT (AMP)105.02.01.00.50.20.1
100 µs500 µs1.0 msTJ = 150°CSECOND BREAKDOWN LIMITEDBONDING WIRE LIMITEDTHERMALLY LIMITED @ TC = 25°CCURVES APPLY BELOW RATED VCEO2N87, 2N902N88, 2N912.05.0 msdc4.04060102080VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability ofa transistors average junction temperature and secondbreakdown. Safe operating area curves indicate IC – VCElimits of the transistor that must be observed for reliableoperation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk)v 150_C. TJ(pk) may be calculated from the data inFigure 4. At high case temperatures, thermal limitations willreduce the power that can be handled to values less than thelimitations imposed by second breakdown
Figure 5. Active–Region Safe Operating Area
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2N87 2N88 2N90 2N91
5000
1000700
ts1000t, TIME (ns)500200100500.20.5tfNPNPNPVCC = 30 VIC/IB = 10IB1 = IB2TJ = 25°C1.02.05.0IC, COLLECTOR CURRENT (AMP)
1020C, CAPACITANCE (pF)300200
CibCobCob10070500.5NPNPNPTJ = 25°C1.02.05.01020VR, REVERSE VOLTAGE (VOLTS)
50Figure 6. Turn–Off TimeFigure 7. Capacitances
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2N87 2N88 2N90 2N91
NPN
2N87, 2N88
500TJ = 150°C200hFE, DC CURRENT GAIN1005020105.00.2VCE = 2.0 VhFE, DC CURRENT GAIN25°C-ā55°C20010050201010205.00.2VCE = 2.0 V0.51.02.05.0IC, COLLECTOR CURRENT (AMP)
102025°C-ā55°CTJ = 150°C500PNP
2N90, 2N91
0.55.01.02.0IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)1.81.61.41.21.00.80.60.40.205.01020IC = 1.0 A4.0 ATJ = 25°CVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)2.02.01.81.61.41.21.00.80.60.40.205.01020501002005001000IB, BASE CURRENT (mA)
20005000IC = 1.0 A4.0 A8.0 ATJ = 25°C8.0 A501002005001000IB, BASE CURRENT (mA)
20005000Figure 9. Collector Saturation Region
2.82.4V, VOLTAGE (VOLTS)2.01.61.20.80.400.2VBE(sat) = IC/IB = 10VBE @ VCE = 2.0 VVCE(sat) @ IC/IB = 100.51.02.05.01020IC, COLLECTOR CURRENT (AMP)TJ = 25°CV, VOLTAGE (VOLTS)2.82.42.01.61.20.80.400.2VBE(sat) @ IC/IB = 10VBE @ VCE = 2.0 VVCE(sat) @ IC/IB = 100.51.02.05.01020IC, COLLECTOR CURRENT (AMP)TJ = 25°CFigure 10. “On” Voltages
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2N87 2N88 2N90 2N91
PACKAGE DIMENSIONS
TO–220ABCASE 221A–09ISSUE AA
–T–B4SEATINGPLANENOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION Z DEFINES A ZONE WHERE ALLBODY AND LEAD IRREGULARITIES AREALLOWED.DIMABCDFGHJKLNQRSTUVZINCHESMINMAX0.5700.6200.3800.4050.1600.1900.0250.0350.1420.1470.0950.1050.1100.1550.0180.0250.5000.5620.0450.0600.1900.2100.1000.1200.0800.1100.0450.0550.2350.2550.0000.0500.045------0.080MILLIMETERSMINMAX14.4815.759.6610.284.074.820.0.883.613.732.422.662.803.930.460.12.7014.271.151.524.835.332.543.042.042.791.151.395.976.470.001.271.15------2.04FTCSQ123AUKHZLVGDNSTYLE 1:PIN 1.2.3.4.
BASECOLLECTOREMITTERCOLLECTOR
RJhttp://onsemi.com
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2N87 2N88 2N90 2N91
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