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专利名称：Through-silicon coaxial via structure and
method
发明人：Adam E. Gallegos,Thomas E. Cynkar申请号：US13948196申请日：20130723公开号：US09070674B2公开日：20150630
专利附图：
摘要：A silicon interconnect structure includes a peripheral outer via in a siliconsubstrate, a solid core inner via in the silicon substrate, the solid core inner via coaxial withthe peripheral outer via to form a coaxial via structure, a metal interconnect stack formed
over a first surface of the peripheral outer via and the solid core inner via, at leastportions of the metal interconnect stack forming an electrical connection with theperipheral outer via and the solid core inner via, first contact pads on a surface of themetal interconnect stack, and second contact pads on an exposed surface of theperipheral outer via and the solid core inner via.
申请人：Avago Technologies General IP (Singapore) Pte. Ltd.
地址：Singapore SG
国籍：SG
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