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N08L1618C2A
Advance Information
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K × 16bitOverview
The N08L1618C2A is an integrated memory
device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L1618C2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs
Features
•Single Wide Power Supply Range
1.65 to 2.2 Volts
•Very low standby current0.5µA at 1.8V (Typical)
•Very low operating current1.0mA at 1.8V and 1µs (Typical)•Very low Page Mode operating current0.5mA at 1.8V and 1µs (Typical)
•Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operationOutput Enable (OE) for memory expansion•Low voltage data retention Vcc = 1.2V
•Very fast output enable access time25ns OE access time
•Very fast Page Mode access timetAAP = 25ns
•Automatic power down to standby mode•TTL compatible three-state output driver
Product Family
Part NumberN08L1618C2ABN08L1618C2AB2
Package Type48 - BGA48 - BGA Green
Operating Temperature
Power Supply (Vcc)
Speed
Standby Operating Current (ISB), Current (Icc),
TypicalTypical
0.5 µA
1mA@1MHz
70ns @ 1.8V
-40oC to +85oC1.65V - 2.2V85ns @ 1.65V
Pin Configuration
Pin Descriptions
3
A0 A3 A5
1ABCDEFGH
LBI/O8
2
OEUB
4
A1 A4
5
A2 CE1
6
CE2I/O0
Pin NameA0-A18WECE1, CE2
OELBUBI/O0-I/O15
VCCVSSNC
Pin FunctionAddress InputsWrite Enable InputChip Enable InputOutput Enable InputLower Byte Enable InputUpper Byte Enable InputData Inputs/Outputs
Power GroundNot Connected
I/O9 I/O10 VSSVCC
A6 I/O1 I/O2A7A16A15A13A10
I/O3I/O4I/O5WEA11
VCCVSSI/O6I/O7NC
I/O11 A17I/O12
NCA14A12A9
I/O14I/O13I/O15A18
NCA8
48 Pin BGA (top)8 x 10 mm
(DOC# 14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
元器件交易网www.cecb2b.com
NanoAmp Solutions, Inc.Functional Block Diagram
WordAddressDecode Logic
N08L1618C2A
Advance Information
AddressInputsA0 - A3
AddressInputsA4 - A18
PageAddressDecodeLogic
32K Pagex 16 wordx 16 bitRAM Array
Input/OutputMux and Buffers
Word MuxI/O0 - I/O7I/O8 - I/O15CE1CE2WEOEUBLB
ControlLogic
Functional Description
CE1HXXLLL
CE2XLXHHH
WEXXXLHH
OEXXXX3LH
UBXXHL1L1L1
LBXXHL1L1L1
I/O0 - I/O151HighZHighZHighZData InData OutHigh Z
MODEStandby2Standby2Standby2Write3Read Active
POWERStandbyStandbyStandbyActive -> Standby4Active -> Standby4
Standby4
1.When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2.When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3.When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
4.The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from any expernal influence.
Capacitance1
ItemInput CapacitanceI/O Capacitance
SymbolCINCI/O
Test Condition
VIN = 0V, f = 1 MHz, TA = 25oCVIN = 0V, f = 1 MHz, TA = 25oC
Min
Max88
UnitpFpF
1.These parameters are verified in device characterization and are not 100% tested
(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
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NanoAmp Solutions, Inc.Absolute Maximum Ratings1
Item
Voltage on any pin relative to VSSVoltage on VCC Supply Relative to VSS
Power DissipationStorage TemperatureOperating TemperatureSoldering Temperature and Time
SymbolVIN,OUTVCCPDTSTGTATSOLDER
Rating
N08L1618C2A
Advance Information
UnitVVmW
o
–0.3 to VCC+0.3–0.3 to 3.0
500–40 to 125-40 to +85260oC, 10sec
C
oCoC
1.Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
ItemSupply VoltageData Retention VoltageInput High VoltageInput Low VoltageOutput High VoltageOutput Low VoltageInput Leakage CurrentOutput Leakage CurrentRead/Write Operating Supply Current
@ 1 µs Cycle Time2Read/Write Operating Supply Current
@ 70 ns Cycle Time2Page Mode Operating Supply Current
@ 70 ns Cycle Time2 Read/Write Quiescent Operating Sup-ply Current3
SymbolVCCVDRVIHVILVOHVOLILIILOICC1ICC2ICC3ICC4
IOH = 0.2mAIOL = -0.2mAVIN = 0 to VCC
OE = VIH or Chip DisabledVCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0,
f = 0VIN = VCC or 0VChip Disabled tA= 85oC, VCC = 2.2 VVcc = 1.2V, VIN = VCC or 0Chip Disabled, tA= 85oC
0.51.010.00.5
Chip Disabled3Test Conditions
Min.1.651.20.7VCC–0.3VCC–0.2
0.20.50.53.014.03.0VCC+0.30.3VCC
Typ11.8
Max2.2
UnitVVVVVVµAµAmAmAmA
20µA
Maximum Standby Current3ISB1
20.0µA
Maximum Data Retention Current
3
IDR
10µA
1.Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2.This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system.
3.This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS.
(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
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NanoAmp Solutions, Inc.
Power Savings with Page Mode Operation (WE = VIH)N08L1618C2A
Advance Information
Page Address (A4 - A18)Open page...Word Address (A0 - A3)Word 1Word 2Word 16CE1CE2OELB, UBNote: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature.The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs.(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
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NanoAmp Solutions, Inc.Timing Test Conditions
ItemInput Pulse LevelInput Rise and Fall Time
Input and Output Timing Reference Levels
Output LoadOperating Temperature
N08L1618C2A
Advance Information
0.1VCC to 0.9 VCC
5ns0.5 VCC 30pF-40 to +85 oC
Timing
ItemRead Cycle Time
Address Access Time (Random Access)Address Access Time (Page Mode)
Chip Enable to Valid Output Output Enable to Valid OutputByte Select to Valid OutputChip Enable to Low-Z outputOutput Enable to Low-Z OutputByte Select to Low-Z OutputChip Disable to High-Z OutputOutput Disable to High-Z OutputByte Select Disable to High-Z OutputOutput Hold from Address Change
Write Cycle TimeChip Enable to End of WriteAddress Valid to End of Write Byte Select to End of Write
Write Pulse WidthAddress Setup TimeWrite Recovery TimeWrite to High-Z OutputData to Write Time OverlapData Hold from Write TimeEnd Write to Low-Z Output
SymboltRCtAAtAAPtCOtOEtLB, tUBtLZtOLZtLBZ, tUBZ
tHZtOHZtLBHZ, tUBHZ
tOHtWCtCWtAWtLBW, tUBW
tWPtAStWRtWHZtDWtDHtOW
4005105100005855050504000
20
4005
202020
1.65 - 2.2 VMin.85
8530853085
105100005705050504000
20202020
Max.
1.8 - 2.2 VMin.70
7025702570Max.
Unitsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsns
(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
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NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) tRC AddresstAA, tAAPtOHN08L1618C2A
Advance Information
Data OutPrevious Data ValidData ValidTiming Waveform of Read Cycle (WE=VIH)tRC AddresstAA, tAAPtHZCE1tCOCE2tLZtOEOEtOLZtLB, tUBLB, UBtLBLZ, tUBLZHigh-ZData OuttLBHZ, tUBHZData ValidtOHZ(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
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NanoAmp Solutions, Inc.
Timing Waveform of Page Mode Read Cycle (WE = VIH)tRCPage Address (A4 - A17)tAA Word Address (A0 - A3)tAAPN08L1618C2A
Advance Information
tHZCE1tCOCE2tOHZtOEOEtOLZLB, UBtLBLZ, tUBLZHigh-ZData OuttLB, tUBtLBHZ, tUBHZ(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
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NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)tWCAddresstAWCE1tCWCE2tLBW, tUBWLB, UBtASWEtDWHigh-ZData IntWHZHigh-ZData OuttDHtWPtWRN08L1618C2A
Advance Information
Data ValidtOWTiming Waveform of Write Cycle (CE1 Control)tWCAddresstAWCE1(for CE2 Control, use inverted signal)LB, UBtWPWEtDWData IntLZData OuttWHZtDHtCWtAStLBW, tUBWtWRData ValidHigh-Z(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
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NanoAmp Solutions, Inc.Ball Grid Array Package
A1 BALL PAD CORNER (3)
D
0.20±0.051.10±0.10
N08L1618C2A
Advance Information
1. 0.30±0.05 DIA.
E
2. SEATING PLANE - Z
0.15Z
0.05
TOP VIEWSIDE VIEW1. DIMENSION IS MEASURED AT THE
A1 BALL PAD
MAXIMUM SOLDER BALL DIAMETER.
CORNER
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK.
K TYP
J TYP
e
Z
SD
eSE
BOTTOM VIEWDimensions (mm)
e = 0.75
D
E
SD
8±0.10
10±0.10
0.375
SE0.375
J2.125
K2.375
BALL MATRIX TYPEFULL
(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9
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NanoAmp Solutions, Inc.Ordering Information
N08L1618C2A
Advance Information
N08L1618C2AX-XX XTemperature
I = Industrial, -40°C to 85°C
70 = 70ns
Performance
Package Type
B = 48-ball BGA
B2= 48-ball BGA Green Package (RoHS compliant)
Revision History
Revision
ABCDEF
DateJan. 2001Mar. 2001Dec. 2001Nov. 2002Oct. 2004Dec. 2005
Change DescriptionInitial Advance ReleaseCorrected voltage in Timing table
Part number change from EM512W16, modified Overview and Features, added Page Mode Operatin diagram, revised Operating Characteristics table, Package
diagram, Functional Description table and Ordering Information diagram
Replaced Isb and Icc on Product Family table with typical values
Added Green Package OptionAdded RoHS compliant on green packages
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. (\"NanoAmp\") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-poses only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
10
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