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专利名称：CMOS memory cell array
发明人：Dave J. McElroy,Manzur Gill,Pradeep L. Shah申请号：US07/954368申请日：19920930公开号：US05350706A公开日：19940927
摘要：A CMOS memory cell array and a method of forming it, which avoids problemscaused by field oxide corner-rounding. A moat pattern defines alternating columns ofactive areas and field oxide regions. A source line pattern defines rows of source lines.Silicon dopant is implanted in areas not covered by the source line pattern to form buriedn+ source lines. The field oxide regions are formed in areas not covered by the moatpattern. Subsequent fabrication steps may be in accordance with conventional CMOSfabrication techniques.
申请人：TEXAS INSTRUMENTS INCORPORATED
代理人：Ann Livingston,Leo N. Heiting,Richard L. Donaldson
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